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    顯示項目201-225 / 298. (共12頁)
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    日期題名作者
    2003-07-01 微循環中血球之追蹤研究; The Tracking of Blood Cells in Microcirculation 游漢輝
    2003-07-01 光折變鈦酸鋇單晶之光譜及多波長光折變性質與氣氛處理關係之研究(III); Study on the Spectroscopy and Wavelength Dependence Photorefractive Properties of BaTiO/sub 3/ Crystal with After-Processing(III) 張正陽
    2003-07-01 具有深次微米閘極長度之高頻氮化鋁鎵/氮化鎵HEMT元件及高靈敏度PIN UV檢測器之研製;Fabrication of High-Speed AlGaN/GaN HEMTs with Deep Sub-Microm Gate Length and High Sensitivity AlGaN/GaN PIN UV Detectors 紀國鐘
    2003-07-01 新光折變材料開發及其應用技術之研究---子計畫III：高效率及新光折變材料開發之研究(III); A Study on the High Efficiency and New Photorefractive Materials(III) 張正陽
    2003-07-01 新型非線性光折變材料生長及其應用---子計畫V:光折變晶體應用於高敏度光學空間與時域感測之研究(III); The Study of High-Sensitive Optical Sensing in Spatial and Temporal Domains with Use of Photorefractive Crystals(III) 孫慶成
    2003-07-01 氮化鎵藍紫光雷射二極體磊晶技術之研究(II); Epitaxial Growth of GaN Violet Laser Diode(II) 綦振瀛
    2003-07-01 新光折變材料開發及其應用技術之研究---新光折變材料開發及其應用技術之研究-總計畫(III); AStudy on the New Photorefractive Material Growth and Applications Technique(III) 游漢輝; 張正陽; 孫慶成; 陳志臣; 藍崇文; 鄭益祥
    2003-05-01 有線/無線通訊整合界面關鍵元件技術開發計畫(I) 綦振瀛
    2003 Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths Li,YL; Gessmann,T; Schubert,EF; Sheu,JK
    2003 Deep level defect in Si-implanted GaN n(+)-p junction Chen,XD; Huang,Y; Fung,S; Beling,CD; Ling,CC; Sheu,JK; Lee,ML; Chi,GC; Chang,SJ
    2003 Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices Waldron,EL; Li,YL; Schubert,EF; Graff,JW; Sheu,JK
    2003 Fabrication of optical transmission elements in an SiNx membrane Lee,CC; Chang,YC; Chang,JY; Chiu,CF; Chi,GC
    2003 High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact Chang,CS; Chang,SJ; Su,YK; Kuo,CH; Lai,WC; Lin,YC; Hsu,YP; Shei,SC; Tsai,JM; Lo,HM; Ke,JC; Shen,JK
    2003 Image-plane disk-type multiplex hologram Cheng,YS; Chen,CH
    2003 In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Hsu,YP; Kuo,CH; Lai,WC; Wen,TC; Tsai,JM; Sheu,JK
    2003 InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR
    2003 InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping Wen,TC; Chang,SJ; Su,YK; Wu,LW; Kuo,CH; Lai,WC; Sheu,JK; Tsai,TY
    2003 Nitride-based blue LEDs with GaN/SiN double buffer layers Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC
    2003 Nitride-based green light-emitting diodes with high temperature GaN barrier layers Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK
    2003 Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Chen,JF; Shen,JK; Tsai,JM
    2003 Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC
    2003 n-UV plus blue/green/red white light emitting diode lamps Kuo,CH; Sheu,JK; Chang,SJ; Su,YK; Wu,LW; Tsai,JM; Liu,CH; Wu,RK
    2003 Photorefractive properties of two series of BaTiO3 crystals annealed in temperatures of 900 degrees C and 1000 degrees C Chang,JY; Huang,CY; Yueh,RR; Pan,HW; Lin,CH; Sun,CC
    2003 Properties of Cu/Au Schottky contacts on InGaP layer Liu,DS; Lee,CT; Wang,CW
    2003 Si and Zn co-doped InGaN-GaN white light-emitting diodes Chang,SJ; Wu,LW; Su,YK; Kuo,CH; Lai,WC; Hsu,YP; Sheu,JK; Chen,SF; Tsai,JM

    顯示項目201-225 / 298. (共12頁)
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