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    显示项目76-85 / 85. (共4页)
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    日期题名作者
    2001 FE calculation of contour integrals in plane anisotropic elastic media with crack surface tractions Chang,JH; Wu,WH
    2001 Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice Sheu,JK; Chi,GC; Jou,MJ
    2001 Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC
    2000 Microstructural evolution in a multiple composite layer of GaN on sapphire by organometallic vapor phase epitaxy Yang,CC; Wu,MC; Lee,CH; Chi,GC
    2000 Optical properties in InGaN/GaN multiple quantum wells and blue LEDs Su,YK; Chi,GC; Sheu,JK
    2000 The doping process of p-type GaN films Chi,GC; Kuo,CH; Sheu,JK; Pan,CJ
    1999 Effects of multiple buffer layers on structural electronic properties of GaN growth by atmospheric pressure Organometallic Vapor Phase Epitaxy Yang,CC; Wu,MC; Chang,CA; Chi,GC
    1996 New types of reflecting prisms and reflecting prism assembly Lian,TS; Chang,MW
    1995 PERFORMANCE ENHANCEMENT USING WSIX/ITO ELECTRODES IN INGAAS/INALAS MSM PHOTODETECTORS CHU,CC; CHAN,YJ; YUANG,RH; CHYI,JI; LEE,CT
    1993 EFFECTS OF GRATING SPACING ON THE RONCHI TEST WAN,DS; CHANG,MW

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