InGaN/GaN light emitting diodes activated in O-2 ambient

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35758

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35758

Title:	InGaN/GaN light emitting diodes activated in O-2 ambient
Authors:	Kuo,CH;Chang,SJ;Su,YK;Chen,JF;Wu,LW;Sheu,JK;Chen,CH;Chi,GC
Contributors:	光電科學研究中心
Keywords:	P-TYPE GAN;CHEMICAL-VAPOR-DEPOSITION;MG;CONTACT;OXYGEN;FILMS
Date:	2002
Issue Date:	2010-07-07 15:50:41 (UTC+8)
Publisher:	中央大學
Abstract:	Mg-doped GaN epitaxial layers were annealed in pure O-2 and pure N-2. It was found that we could achieve a low-resistive p-type GaN by pure O-2 annealing at a temperature as low as 400 degreesC. With a 500 degreesC annealing temperature, it was found that
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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