Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35756

Title:	Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes
Authors:	Wu,LW;Chang,SJ;Wen,TC;Su,YK;Chen,JF;Lai,WC;Kuo,CH;Chen,CH;Sheu,JK
Contributors:	光電科學研究中心
Keywords:	MG-DOPED GAN;PHOTODETECTORS;SAPPHIRE
Date:	2002
Issue Date:	2010-07-07 15:50:38 (UTC+8)
Publisher:	中央大學
Abstract:	A detailed study on the effects of Si-doping in the GaN barrier layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs) has been performed. Compared with unintentionally doped samples, X-ray diffraction results indicate that Si-doping in
Relation:	IEEE JOURNAL OF QUANTUM ELECTRONICS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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