Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35736

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35736

Title:	Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers
Authors:	Kuo,CH;Chang,SJ;Su,YK;Wu,LW;Sheu,JK;Wen,TC;Lai,WC;Tsai,JM;Chen,SC
Contributors:	光電科學研究中心
Keywords:	RAY PHOTOEMISSION SPECTROSCOPY;GAN;INGAN;SI;OPERATION;ALN
Date:	2003
Issue Date:	2010-07-07 15:50:17 (UTC+8)
Publisher:	中央大學
Abstract:	The In0.05Ga0.95N/GaN, In0.05Ga0.95l0.1Ga0.9N, and In0.05Ga0.95L(0.18)Ga(0.82)N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescen
Relation:	JOURNAL OF ELECTRONIC MATERIALS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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