Dislocation reduction in GaN with multiple MgxNy/GaN buffer layers by metal organic chemical vapor deposition

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35697

Title:	Dislocation reduction in GaN with multiple MgxNy/GaN buffer layers by metal organic chemical vapor deposition
Authors:	Tun,C. J.;Kuo,C. H.;Fu,Y. K.;Kuo,C. W.;Pan,C. J.;Chi,G. C.
Contributors:	光電科學研究中心
Keywords:	LIGHT-EMITTING-DIODES;LASER-DIODES;MQW LEDS;SCATTERING;SUBSTRATE;EVOLUTION;GROWTH;FILMS
Date:	2007
Issue Date:	2010-07-07 15:49:13 (UTC+8)
Publisher:	中央大學
Abstract:	Unintentionally doped GaN epitaxial layers with a conventional single low temperature (LT) GaN buffer layer and with multiple MgxNy/GaN buffer layers were grown on sapphire substrates by metal organic chemical vapor deposition. The multiple MgxNy/GaN buff
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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