電漿輔助沉積類磊晶矽膜製程技術開發及應用於三氯矽甲烷製程特氣之微量金屬檢定;Process Development of Plasma-Enhanced Deposition of Epitaxial-Like Silicon Film and Its Application to Trace Metal Detection of Process Gas-Trichlorosilane

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Title:	電漿輔助沉積類磊晶矽膜製程技術開發及應用於三氯矽甲烷製程特氣之微量金屬檢定;Process Development of Plasma-Enhanced Deposition of Epitaxial-Like Silicon Film and Its Application to Trace Metal Detection of Process Gas-Trichlorosilane
Authors:	李建階;劉正毓
Contributors:	國立中央大學光電科學研究中心
Keywords:	類磊晶矽膜;三氯矽甲烷;微量金屬檢測;光放射光譜;epitaxial-like silicon film;Trichlorosilane;Trace Metal Detection;optical emission spectrum
Date:	2018-12-19
Issue Date:	2018-12-20 11:36:40 (UTC+8)
Publisher:	科技部
Abstract:	三氯矽甲烷(SiHCl3-TCS)是半導體、液晶面板與太陽光電產業的重要原物料之一，主要做為半導體產業中多晶矽材與電子級特用氣體-矽甲烷的製造原料，但目前此原物料80%以上須仰賴國外進口。由於在電子級特用氣體中微量金屬雜質含量的多寡會影響各類半導體元件的絕緣層或導電層的電特性，尤其是今日眾多光電元件線寬縮減至奈米尺度時，在相關半導體製程(蝕刻/薄膜沉積)中如何準確分析及控制微量金屬雜質含量特別重要，並成為維持高製程良率的關鍵因素。由於該特氣具有可燃性、禁水性、毒性與腐蝕性，因此不能直接使用此氣體源進行微量金屬測定，所以在與實聯能源科技合作計畫目標為製備結晶矽膜樣品以應用於該公司之三氯矽甲烷微量金屬的定性定量分析。因此規劃利用電漿輔助化學氣相沉積法使用該公司製造三氯矽甲烷為結晶矽膜製程氣體源，及搭配光放射光譜量測以優化製程參數進行沉積不同厚度(0.5~2 μm)本質類磊晶矽薄膜做為微量金屬檢測試樣，以能建立微量金屬雜質定性及ppb~ppt定量檢測技術。有關本質類磊晶矽薄膜品質則利用不同製程氣體混氣比(R- 5~20)和射頻功率(100~300W)的2種製程條件來調控其本質矽薄膜的結晶率，並以利用橢圓儀確認其厚度及結晶率；然後另外以傅氏轉換紅外線光譜儀、及四點探針法進行量測其化學鍵結和電阻率的結構與電特性差異作為後續微量金屬檢測分析依據。然後再以感應偶合電漿質譜儀定性定量檢測相關化學溶液和待測樣品，用以排除進樣干擾汙染源和建立微量金屬雜質的標準試樣前處理和最佳化流程。並將檢樣含有微量金屬雜質差異性結果回饋於實聯能源科技做為純化三氯矽甲烷降低微量金屬雜質依據，使其達到電子級特用氣體之產業界需求規格，藉以提高國內廠商自製高品質特氣能力及國內半導體產業關鍵原物料更多供應商的選擇，預期可增加國內三氯矽甲烷(TCS)約400噸的供應需求量，而促進在國內生產自主半導體原物料產品，並使增加自主生產百分比約12~30%﹔另增加大陸地區約800 MT(噸/年)的供應需求量，以及提升台灣半導體原物料外銷出口銷售，預期增加約15%的銷售量。 ;Trichlorosilane-TCS is an important raw material of semiconductor, LCD panels and photovoltaic industries, esspecially it is most important as the main material for polysilicon and electronic grade special gas - silane in the semiconductor industry, but more than 80% of raw materials to be dependent on foreign imports. The presence of trace metal impurities in electronic specialty gases (ESGs) can modify the electrical properties of the insulating or conducting layers in a semiconductor device. The importance of controlling these impurities in the etching and deposition processes has increased as the feature sizes have decreased and become more complex. The program objective with Shihlien Fine Chemical Cooperation (SFC Co.) is the technique development of standardized quantitative and qualitative trace metal analysis for TCS. However, due to it is flammable, toxic and corrosive, we can not directly measured trace metals from gas source. Various thickness (0.5-2 μm) intrinsic epitaxial-like silicon films will be deposited through optimized process parameters by plasma enhanced chemical vapor deposition system using the SFC manufacturing trichlorosilane as source gas, and these films are using as the samples of the trace metal measurements for the establishment of the qualitative and quantitative ppb~ppt detection technology of trace metal impurities.We can control the qualities of intrinsic epitaxial-like silicon films respectively after the measurements by ellipsometry, Fourier transform infrared spectroscopy, and four point probe method, which were verified the thickness, the crystallization, chemical bonding and the resistivity, as the following detection data bases of trace metal analysis. Then, the related chemical solution and samples were qualitatively and quantitatively detected by inductively coupled plasma mass spectrometry to establish the standard sample pretreatments and optimization processes of trace metal impurities after verifing the contamination source. And all the results of the sample containing trace metal impurities will be feedback to SFC Co. as purifing trichlorosilane to reduce trace metal impurities, to reach the level of electronic specialty gas demand of industry specifications. Hoping so as to improve fabrication ability of high-quality special gas from the domestic manufacturers and the key raw materials more suppliers for the domestic semiconductor industry.
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Optical Sciences Center] Research Project

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