目前由於天然能源的缺乏，以致能源輸出國將各種原物?價格?斷的提升，台灣每?約有95%的能源仰賴進口，所以?用再生能源的科學研究將是迫在眉睫。其中太陽能源如果能有效?地利用，將是國家最重要的科技發展重點之ㄧ。本計畫之中重點在於利用氮化物半導體製作全光譜太陽電池之研究，由於氮化物半導體之能隙可以由AlN(Eg=6.2 eV)調變至InN(Eg=0.8 eV)，其能隙涵蓋了全太陽光頻譜，所以選擇氮化物半導體進行製作太陽電池之研究。本計劃主要以本實驗室在Sapphire上成長超高亮度氮化物發光二極體之經驗為基礎，發展在雙面拋光sapphire基板上成長太陽電池元件之MOCVD磊晶技術，以習知之技術成長高品質之InGaN吸光層，藉由不同組成InGaN形成不同之吸光區，配合現有之製程技術，開發高透光率之透明導電層及雷射剝離基板之技術，提昇轉換效率製造出單接面或多接面的氮化物太陽電池。如上所述本計畫可分為（一）高吸收(可?光區)InGaN材?的成長與材料分析；（二）高透光率之透明導電層之開發；（三）太陽能電池製作與元件光電特性分析。 The topic of this plan is to develop the high-efficiency nitride-based material solar cell following the decided government policy on environment-protective energy. GaN and its related compounds such as AlGaN and InGaN have recently emerged as important semiconductor materials leading to the realization of high performance light emitters from ultraviolet (UV) to blue and green spectral regions. The core technology of nitride-based solar cell is epitaxy and device process. In the expiaxy, it can be to improve the InGaN film quality to enhance the absorption efficiency. The absorption spectrum of nitride-based solar cell is limited mainly by the In content in the InGaN. In the process, the big issue needs to further enhance efficiency. We try to remove the sapphire substrate by using the laser-lift-off technology to enhance the efficiency of the solar cell. In this proposal, we tried to develop of epitaxy and processing technology for high efficiency nitride-based material solar cell. we will to fabricate single-junction and multi-junction nitride-based material solar cell on the double side polish sapphire substrate. The advantage structure of solar cells with multi-quantum well or distributed energy-gap structure will be demonstrated. Characteristics of epitaxial layers, process and nitride-based material solar cell will also be discussed. 研究期間：9601 ~ 9612
