Microstructural evolution in a multiple composite layer of GaN on sapphire by organometallic vapor phase epitaxy

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35792

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35792

Title:	Microstructural evolution in a multiple composite layer of GaN on sapphire by organometallic vapor phase epitaxy
Authors:	Yang,CC;Wu,MC;Lee,CH;Chi,GC
Contributors:	光電科學研究中心
Keywords:	BUFFER LAYER;FILMS;DEPOSITION
Date:	2000
Issue Date:	2010-07-07 15:51:15 (UTC+8)
Publisher:	中央大學
Abstract:	Using cross-section transmission electron microscopy and grazing incidence x-ray diffraction measurements, this work investigates the defect reduction in a wurtize GaN thin film with a multiple composite layer grown by atmospheric-pressure organometallic
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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