Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices

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Title:	Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices
Authors:	Sheu,JK;Kuo,CH;Chen,CC;Chi,GC;Jou,MJ
Contributors:	光電科學研究中心
Keywords:	INDIUM TIN OXIDE;LIGHT-EMITTING-DIODES;P-TYPE GAN;LUMINESCENCE;BAND
Date:	2001
Issue Date:	2010-07-07 15:51:05 (UTC+8)
Publisher:	中央大學
Abstract:	Low resistivity Mg-doped Al0.15Ga0.85N/GaN strained-layer superlattices (SLs) were grown. In these SLs, the maximum hole concentration is 3 x 10(18) cm(-3) at room temperature, i.e., larger than those for Mg-doped Al0.15Ga0.85N and GaN bulk layers with th
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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