Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35780

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35780

Title:	Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition
Authors:	Wen,TC;Lee,WI;Sheu,JK;Chi,GC
Contributors:	光電科學研究中心
Keywords:	MG;GAN
Date:	2001
Issue Date:	2010-07-07 15:51:02 (UTC+8)
Publisher:	中央大學
Abstract:	This study investigates the electrical and optical characteristics of Mg-doped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier conce
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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