Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35770

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35770

Title:	Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching
Authors:	Wen,TC;Lee,WI;Sheu,JK;Chi,GC
Contributors:	光電科學研究中心
Keywords:	CHEMICAL-VAPOR-DEPOSITION;THREADING DISLOCATIONS;LAYERS;MICROSCOPY;DIODES
Date:	2002
Issue Date:	2010-07-07 15:50:53 (UTC+8)
Publisher:	中央大學
Abstract:	This work investigates dislocation etch pits in epitaxial lateral overgrowth (ELO) GaN by wet etching. A mixture of H2SO4 and H3PO4 was used as an etching solution. SEM and AFM were employed to observe the surface topography. For the as-grown sample, SEM
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	580	View/Open

社群 sharing