InGaN/GaN tunnel-injection blue light-emitting diodes

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35760

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35760

Title:	InGaN/GaN tunnel-injection blue light-emitting diodes
Authors:	Wen,TC;Chang,SJ;Wu,LW;Su,YK;Lai,WC;Kuo,CH;Chen,CH;Sheu,JK;Chen,JF
Contributors:	光電科學研究中心
Keywords:	QUANTUM-WELL;TEMPERATURE-DEPENDENCE;LASER;GAN;PHOTODETECTORS;MODULATION;CAPTURE;DEVICE
Date:	2002
Issue Date:	2010-07-07 15:50:43 (UTC+8)
Publisher:	中央大學
Abstract:	A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In0.18Ga0.82 N electron emitter layer, we could increase the L
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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