Si and Zn co-doped InGaN-GaN white light-emitting diodes

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35744

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35744

Title:	Si and Zn co-doped InGaN-GaN white light-emitting diodes
Authors:	Chang,SJ;Wu,LW;Su,YK;Kuo,CH;Lai,WC;Hsu,YP;Sheu,JK;Chen,SF;Tsai,JM
Contributors:	光電科學研究中心
Keywords:	PHOTODETECTORS;CONTACTS;LAYER
Date:	2003
Issue Date:	2010-07-07 15:50:26 (UTC+8)
Publisher:	中央大學
Abstract:	InGaN-GaN double heterostructure (DH) and multi-quantum-well (MQW) light-emitting diodes (LEDs) with Si and Zn co-doped active well layers were prepared by metalorganic chemical vapor deposition (MOCVD). It was found that we could observe a broad long-wav
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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