In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35725

Title:	In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer
Authors:	Wu,LW;Chang,SJ;Su,YK;Chuang,RW;Hsu,YP;Kuo,CH;Lai,WC;Wen,TC;Tsai,JM;Sheu,JK
Contributors:	光電科學研究中心
Keywords:	LIGHT-EMITTING-DIODES;LOW-OPERATION VOLTAGE;VAPOR-PHASE EPITAXY;QUANTUM-WELL BLUE;O-2 AMBIENT;SI;SUPERLATTICE
Date:	2003
Issue Date:	2010-07-07 15:49:54 (UTC+8)
Publisher:	中央大學
Abstract:	Mg-doped p-GaN epitaxial layers prepared at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 degreesC. In0.23Ga0.77N/G
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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