Effect of thermal annealing on Ga-doped ZnO films prepared by magnetron sputtering

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35698

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35698

Title:	Effect of thermal annealing on Ga-doped ZnO films prepared by magnetron sputtering
Authors:	Sheu,J. K.;Shu,K. W.;Lee,M. L.;Tun,C. J.;Chi,G. C.
Contributors:	光電科學研究中心
Keywords:	LIGHT-EMITTING-DIODES;OXIDE-FILMS;ELECTRICAL-PROPERTIES;ROOM-TEMPERATURE;OHMIC CONTACTS;PHOTOLUMINESCENCE;CONDUCTIVITY;DEPOSITION;METAL
Date:	2007
Issue Date:	2010-07-07 15:49:15 (UTC+8)
Publisher:	中央大學
Abstract:	In this study, Ga-doped ZnO (GZO) films deposited on a sapphire utilizing magnetron cosputtering method using ZnO and Ga2O3 targets were demonstrated. The results revealed that the resistivities of the GZO films reduced by at least two orders of magnitude
Relation:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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