Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method

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题名:	Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method
作者:	Chang,K. J.;Chang,J. Y.;Chen,M. C.;Lahn,S. M.;Kao,C. J.;Li,Z. Y.;Uen,W. Y.;Chi,G. C.
贡献者:	光電科學研究中心
关键词:	FUNDAMENTAL-BAND GAP;THIN-FILMS;TEMPERATURE-DEPENDENCE;OPTICAL-ABSORPTION;HEXAGONAL INN;PHOTOLUMINESCENCE;ENERGY;EDGE;SPECTROSCOPY;ALLOYS
日期:	2007
上传时间:	2010-07-07 15:49:10 (UTC+8)
出版者:	中央大學
摘要:	In this study, a two-step growth method with a thin predeposited indium (In) layer is reported to grow high-quality indium nitride (InN) films on silicon (Si) substrates by metal-organic chemical vapor deposition. The surface morphologies of the InN films
關聯:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
显示于类别:	[光電科學研究中心] 期刊論文

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