Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35689

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35689

Title:	Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy
Authors:	Chen,J. Y.;Chi,G. C.;Huang,P. J.;Chen,M. Y.;Hung,S. C.;Nien,C. H.;Chen,M. C.;Lan,S. M.;Pong,B. J.;Pan,C. J.;Tun,C. J.;Ren,F.;Chang,C. Y.;Pearton,S. J.
Contributors:	光電科學研究中心
Keywords:	MOLECULAR-BEAM EPITAXY;WURTZITE INN
Date:	2008
Issue Date:	2010-07-07 15:49:01 (UTC+8)
Publisher:	中央大學
Abstract:	InN quantum dots (QDs) were grown over 2 in. Si (1 1 1) wafers with a 300 nm thick AlN buffer layer by atmospheric-pressure metal organic vapor phase epitaxy. When the growth temperature increased from 450 to 625 degrees C, the corresponding InN QDs heigh
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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