PERFORMANCE ENHANCEMENT USING WSIX/ITO ELECTRODES IN INGAAS/INALAS MSM PHOTODETECTORS

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题名:	PERFORMANCE ENHANCEMENT USING WSIX/ITO ELECTRODES IN INGAAS/INALAS MSM PHOTODETECTORS
作者:	CHU,CC;CHAN,YJ;YUANG,RH;CHYI,JI;LEE,CT
贡献者:	光電科學研究中心
关键词:	INGAAS
日期:	1995
上传时间:	2010-06-30 15:39:34 (UTC+8)
出版者:	中央大學
摘要:	A thin (200 Angstrom) WSix film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55 mu m. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared with the conventional thick metal gate MSM detectors.
關聯:	ELECTRONICS LETTERS
显示于类别:	[光電科學研究中心] 期刊論文

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